Compact semiconductor package with integrated bypass capacitor

ABSTRACT

A top-side cooled compact semiconductor package with integrated bypass capacitor is disclosed. The top-side cooled compact semiconductor package includes a circuit substrate with terminal leads, numerous semiconductor dies bonded atop the circuit substrate, numerous elevation-adaptive interconnection plates for bonding and interconnecting top contact areas of the semiconductor dies with the circuit substrate, a first member of the elevation-adaptive interconnection plates has a first flat-top area and a second member of the elevation-adaptive interconnection plates has a second flat-top area in level with the first flat-top area, a bypass capacitor, having two capacitor terminals located at its ends, stacked atop the two interconnection plate members while being bonded thereto via the first flat-top area and the second flat-top area for a reduced interconnection parasitic impedance.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of a pending US patentapplication entitled “Compact Semiconductor Package with IntegratedBypass Capacitor and Method” by Francois Hebert, et al with U.S.application Ser. No. 12/330,381, filed Dec. 8, 2008, now U.S. Pat. No.8,062,932, issued Nov. 22, 2011, whose content is hereby incorporated byreference for all purposes. In turn, application APOM020 is acontinuation in part (CIP) application of the following commonlyassigned US patent application:

U.S. patent application Ser. No. 12/326,065 filed Dec. 1, 2008, entitled“Top-side Cooled Semiconductor Package with Stacked InterconnectionPlates and Method” by Kai Liu et al, hereafter referred to as U.S.application Ser. No. 12/326,065

whose content is also incorporated herein by reference for any and allpurposes.

FIELD OF INVENTION

This invention relates generally to the field of electronic systempackaging. More specifically, the present invention is directed to thephysical level packaging of semiconductor dies.

BACKGROUND OF THE INVENTION

Owing to their high integration density, extremely low quiescent leakagecurrent and ever improving power handling capacity, power MOSFETscontinue their popular adoption in power electronics such as switchingpower supplies and converters. Some of the highly important attributesof power MOSFETs are their continuously increasing degree ofintegration, shrinking package size and accompanying increased requiredheat dissipation driven by the consumer market.

The following lists some relevant prior arts already reviewed by U.S.application Ser. No. 12/326,065:

-   “DirectFET” approach (U.S. Pat. No. 6,624,522, U.S. Pat. No.    7,285,866 and US Patent Application Publication 2007/0284722)-   U.S. Pat. No. 6,777,800 entitled “Semiconductor die package    including drain clip”-   Commonly assigned U.S. application Ser. No. 11/799,467 entitled    “SEMICONDUCTOR PACKAGE HAVING DIMPLED PLATE INTERCONNECTIONS”-   U.S. Pat. No. 6,249,041 entitled “IC chip package with directly    connected leads”-   U.S. Pat. No. 4,935,803 entitled “Self-centering electrode for power    devices”-   Commonly assigned US Patent Application Publication 20080087992    entitled “Semiconductor package having a bridged plate    interconnection”-   Commonly assigned U.S. patent application Ser. No. 12/130,663    entitled “CONDUCTIVE CLIP FOR SEMICONDUCTOR DEVICE PACKAGE”-   Commonly assigned U.S. patent application Ser. No. 12/237953    entitled “Top Exposed Clip with Window Array”

In a paper entitled “System in Package with Mounted Capacitor forReduced Parasitic Inductance in Voltage Regulators” by T. Hashimoto etal, published in IEEE Proceedings of the 20th International Symposium onPower Semiconductor Devices & IC's, May 18-22, 2008 Orlando, Fla. pp.315-318, a developed system in package (SiP) is described on which aninput capacitor is mounted for voltage regulators (VR). For convenienceof description, this paper is referred to hereinafter as “IEEE paper”. Aone-phase VR circuit including parasitic inductance (Ls1-Ls6) and anSiP, which has high-side and low-side MOSFETs and a driver IC, of theIEEE paper is reproduced here as FIG. 1. Correspondingly, two schematiccross-sections of SiPs on a printed circuit board (PCB) are reproducedin FIG. 1A and FIG. 1B.

In the SiP shown in FIG. 1A, the input capacitor is mounted on the PCB,and the MOSFETs are bonded to the lead frames with Cu leads. Thecalculated parasitic inductance of the SiP is 0.87 nH due to theparasitic inductances from Cin to the SiP (Ls1 and Ls6 shown in FIG. 1).In the improved SiP with a mounted input capacitor of FIG. 1B, theparasitic inductance is reduced by more than 50% (from 0.87 to 0.39 nH)because of a small loop from Cin to the SiP. The upper electrodes ofMOSFETs (i.e. drain electrode of the high-side MOSFET and sourceelectrode of the low-side MOSFET) are connected to the lead frames withCu leads, on which Cin is mounted. High-side and low-side MOSFETs aremounted on the same lead frame, which connects to the output inductor.The high-side MOSFET die is flipped so that its drain electrode facesup, facilitating connection of the drain electrode to the positiveterminal of Cin. Another advantage of the improved SiP of FIG. 1B comesfrom its lower equivalent series resistance (ESR) of the mountedcapacitor that enables the reduction of capacitor loss from its resonantcurrent.

Thus, the packaging concept as presented in the IEEE paper is based uponusing FLIP-CHIP of standard BOTTOM DRAIN MOSFET dies. Copper leads areused for connecting the top of the MOSFET dies to lead frames. From thephotograph of the IEEE paper, the construction details on how the InputCapacitor Cin is mounted on top of the SiP are limited although there isno evidence that the SiP is top exposed outside of the small contactopenings made for Cin to increase top-side heat dissipation. Anotherobservation is that the SiP of the IEEE paper does not top expose largeareas above the High-side and Low-side MOSFET dies other than the endsof Cin.

In view of the above described prior arts, therefore, it remains highlydesirable to further reduce the size of power semiconductor device SiPwith an integrated input capacitor while reducing its packagingparasitic inductance and resistance, reducing ESR of its input capacitorand lowering its packaging thermal resistance.

SUMMARY OF THE INVENTION

A compact semiconductor package with integrated bypass capacitor isproposed. The compact semiconductor package includes:

-   -   A circuit substrate having numerous terminal leads for external        electrical connection.    -   A number of semiconductor dies whose bottom surfaces are bonded        atop the circuit substrate.    -   A number of elevation-adaptive interconnection plates for        bonding and interconnecting the top contact area of each of the        semiconductor dies with the circuit substrate while being three        dimensionally formed to accommodate for elevation difference        between the top contact area and the circuit substrate thus        electrically connecting the top contact area with the terminal        leads.    -   A first member of the elevation-adaptive interconnection plates        has a first flat-top area and a second member of the        elevation-adaptive interconnection plates has a second flat-top        area in level with the first flat-top area.    -   A bypass capacitor, having two end capacitor terminals, stacked        atop the two interconnection plate members while being bonded        thereto via the first flat-top area and the second flat-top        area.

The two end capacitor terminals, which may be located at opposite endsof capacitor, may have a wrap-around design, or may be located only onthe bottom surface of the capacitor.

As a substantial structural variation, the number of elevation-adaptiveinterconnection plates are divided into:

-   -   A first number of low thermal resistance intimate        interconnection plates for bonding and interconnecting the top        contact area of the semiconductor dies with the circuit        substrate.    -   A second number of low thermal resistance stacked        interconnection plates, each stacked and bonded atop a selected        number of the intimate interconnection plates, for adding        effective top-side cooling to the compact semiconductor package        and/or for optimizing connection to the bypass capacitor.

As a structural refinement, the compact semiconductor package includes amolding encapsulant for encapsulating most of the semiconductor packageexcept for exposing a top surface of the flat-top areas. Alternatively,the molding encapsulant may encapsulate most of the semiconductorpackage except for exposing a top surface of the bypass capacitor tomaintain effective top-side cooling through it.

As a structural improvement, the top portion of at least one stackedinterconnection plates includes a peripheral overhang above itscorrespondingly bonded intimate interconnection plates. The peripheraloverhang allows for a maximized top surface area of the stackedinterconnection plates for heat dissipation independent of otherwiseareal constraints applicable to the intimate interconnection platesbelow. By the same token, each intimate interconnection plate can beshaped and sized, independently of the amount of top surface of itscorresponding stacked interconnection plate, to maximize itscorresponding bonding areas on the semiconductor dies thus reducingtheir associated spreading resistance. The peripheral overhang can becreated by partially etching a stacked interconnection plate at itsunderside. Alternatively, the peripheral overhang can be created bythree dimensionally forming a stacked interconnection plate.

As a refined embodiment, either an intimate interconnection plate or astacked interconnection plate can include numerous locking tabs placedin intermeshing relationship with a corresponding number of terminalleads nearby to minimize rotational creepage of the semiconductor diesduring a packaging process for the semiconductor package.

As an embodiment, the circuit substrate can be a leadframe havingconductive die pads for bonding the number of semiconductor dies.Alternatively, the circuit substrate can be a laminated circuit havingnumerous thermal vias to increase bottom-side cooling.

As a more specific embodiment, the number of semiconductor dies includea bottom source high-side (BSHS) MOSFET and a low-side (LS) MOSFETwhich, together with the bypass capacitor, are all components of apower-conversion circuit output stage.

An alternative compact semiconductor package with integrated bypasscapacitor is proposed. The alternative compact semiconductor packageincludes:

-   -   A circuit substrate having a first number of terminal leads for        external electrical connection.    -   A first number of elevation-adaptive interconnection plates for        bonding the top contact area of the semiconductor dies and        forming a second number of terminal leads for external        electrical connection while being three dimensionally formed to        accommodate for elevation difference between the top contact        area and the second number of terminal leads.    -   A first member of the first number of elevation-adaptive        interconnection plates has a first flat-top area and a second        member of the first number of elevation-adaptive interconnection        plates has a second flat-top area in level with the first        flat-top area.    -   a bypass capacitor, having two end capacitor terminals, stacked        atop the two interconnection plate members while being bonded        thereto via the first flat-top area and the second flat-top        area.

A method of packaging a semiconductor package having a bypass capacitorplus a number of semiconductor dies interconnected with numerouselevation-adaptive intimate interconnection plates andelevation-adaptive stacked interconnection plates is proposed. Themethod includes:

-   -   a) Providing a circuit substrate having numerous terminal leads        for external electrical connection.    -   b) Providing the semiconductor dies and attaching them atop the        circuit substrate.    -   c) Providing and attaching numerous intimate interconnection        plates to the top contact areas of the semiconductor dies and        the circuit substrate for electrical connection between the top        contact areas and the terminal leads.    -   d) Providing and attaching numerous stacked interconnection        plates atop a selected number of intimate interconnection plates        while insuring that a first member of the stacked        interconnection plates has a first flat-top area and a second        member of the stacked interconnection plates has a second        flat-top area in level with the first flat-top area.    -   e) Molding an encapsulant over the package in progress.    -   f) Removing a top portion of the molding encapsulant till the        top surfaces of the first flat-top area and the second flat-top        area are exposed.    -   g) Providing a bypass capacitor having two ends capacitor        terminals located at its ends, stacking then bonding the bypass        capacitor atop the two stacked interconnection plate members via        the first flat-top area and the second flat-top area.

As a variation in the packaging method, the above steps e) and f) can bereplaced by:

-   -   e) Placing a detachable mask over the top surfaces of the first        flat-top area and the second flat-top area.    -   f) Molding an encapsulant over the package in progress then        removing the detachable mask from the package in progress to        expose the top surfaces of the first flat-top area and the        second flat-top area.

As another variation in the packaging method, the above steps e), f),and g) can be replaced by:

-   -   e) Providing a bypass capacitor having two end capacitor        terminals located at its ends, stacking then bonding the bypass        capacitor atop the two stacked interconnection plate members via        the first flat-top area and the second flat-top area.    -   f) Molding an encapsulant over the package in progress.    -   g) Optionally, Removing a top portion of the molding encapsulant        till the top surface of the bypass capacitor is exposed.

These aspects of the present invention and their numerous embodimentsare further made apparent, in the remainder of the present description,to those of ordinary skill in the art.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more fully describe numerous embodiments of the presentinvention, reference is made to the accompanying drawings. However,these drawings are not to be considered limitations in the scope of theinvention, but are merely illustrative.

FIG. 1 is a one-phase voltage regulator circuit, including an SiP havinghigh-side and low-side MOSFETs and a driver IC, of a prior art IEEEpaper;

FIG. 1A and FIG. 1B are two corresponding schematic cross-sections ofSiPs on a printed circuit board extracted from the prior art IEEE paper;

FIG. 2 illustrates a first partial semiconductor package of the presentinvention including two semiconductor dies atop a leadframe;

FIG. 3A through FIG. 3D illustrate four additional partial semiconductorpackages of the present invention each including two semiconductor diesatop a leadframe;

FIG. 4A and FIG. 4B illustrate the completion of a compact semiconductorpackage of the present invention with a molding encapsulant; and

FIG. 5 illustrates an alternative compact semiconductor package of thepresent invention with a molding encapsulant.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

The description above and below plus the drawings contained hereinmerely focus on one or more currently preferred embodiments of thepresent invention and also describe some exemplary optional featuresand/or alternative embodiments. The description and drawings arepresented for the purpose of illustration and, as such, are notlimitations of the present invention. Thus, those of ordinary skill inthe art would readily recognize variations, modifications, andalternatives. Such variations, modifications and alternatives should beunderstood to be also within the scope of the present invention.

FIG. 2 illustrates a first partial semiconductor package 500 of thepresent invention including a semiconductor die one 520 a and asemiconductor die two 520 b. The first partial semiconductor package 500includes:

A circuit substrate, in this case a leadframe 502, having numerousterminal leads 506 a and terminal leads 506 b for making externalelectrical connection.

The bottom surfaces of semiconductor die one 520 a and semiconductor dietwo 520 b are bonded atop the leadframe 502 via its die pad one 504 aand die pad two 504 b respectively. Alternatively, the two semiconductordies 520 a and 520 b may sit atop a single die pad accommodating bothdies.A low thermal and electrical resistance intimate interconnection plateone 526 a for bonding and interconnecting the top contact area ofsemiconductor die one 520 a with the leadframe 502 while being threedimensionally formed to accommodate for elevation difference betweenthem thus electrically connecting the top contact area of semiconductordie one 520 a with terminal leads 506 a.Similarly, a low thermal and electrical resistance intimateinterconnection plate two 526 b for bonding and interconnecting the topcontact area of semiconductor die two 520 b with the leadframe 502 whilebeing three dimensionally formed to accommodate for elevation differencebetween them thus electrically connecting the top contact area ofsemiconductor die two 520 b with terminal leads 506 b.A low thermal resistance stacked interconnection plate one 530 a,stacked and bonded atop the intimate interconnection plate one 526 awith solder 528 a or a similar material, for adding effective top-sidecooling to the partial semiconductor package 500. Similarly, a lowthermal resistance stacked interconnection plate two 530 b, stacked andbonded atop the intimate interconnection plate two 526 b with solder 528b, for adding effective top-side cooling to the partial semiconductorpackage 500. Notice that the stacked interconnection plate one 530 a hasa first flat-top area 534 a and the stacked interconnection plate two530 b has a second flat-top area 534 b that is in level with the firstflat-top area 534 a. Notice also that the top portion of stackedinterconnection plate one 530 a has an underside partially etchedperipheral overhang 532 a that is located above the intimateinterconnection plate one 526 a and the top portion of stackedinterconnection plate two 530 b has an underside partially etchedperipheral overhang 532 b that is located above the intimateinterconnection plate two 526 b. As a design variation, the peripheraloverhang can instead be created by three dimensionally forming a stackedinterconnection plate. As was elucidated in U.S. application Ser. No.12/326,065, the combination of intimate interconnection plate andstacked interconnection plate with the stacked interconnection platehaving peripheral overhangs allows for a maximized exposed flat-topareas for heat dissipation independent of otherwise areal constraintsapplicable to the intimate interconnection plate below. It also followsthat this combination can offer minimized die-to-terminal leadselectrical resistance and die-to-ambient thermal resistance at the sametime in the presence of increased number of top side die electrodes andplate features of lower elevation. In accordance with one embodiment ofthe invention, a molding encapsulant 535 may cover most of the partialsemiconductor package, but leave the first and second flat-top areas 534a and 534 b exposed. By way of example semiconductor die one 520 a maybe a low-side (LS) MOSFET, and semiconductor die two 520 b may be ahigh-side (HS) MOSFET.

FIG. 3A through FIG. 3D illustrate four additional partial semiconductorpackages 600, 700, 800 and 900 of the present invention each includingtwo semiconductor dies atop a leadframe. The partial semiconductorpackage 600 of FIG. 3A packages semiconductor die one 620 a andsemiconductor die two 620 b atop a leadframe 602. An intimateinterconnection plate one 626 a and a stacked interconnection plate one630 a are employed to interconnect bulk of the top contact area ofsemiconductor die one 620 a with a terminal lead 606 b of the leadframe602. An intimate interconnection plate two 626 b and a stackedinterconnection plate two 630 b are employed to interconnect the topcontact area of semiconductor die two 620 b with terminal leads 606 f,606 g and 606 h of the leadframe 602. Additionally, an additionalinterconnection plate 626 c is employed to interconnect a small portionof the top contact area of semiconductor die one 620 a with a terminallead 606 a of the leadframe 602. An example of the small portion of thetop contact area is a top-side gate contact of a MOSFET semiconductordie, in which case the additional interconnection plate 626 c is a gateclip. A bonding wire 622 b is employed to interconnect a small portionof the top contact area of semiconductor die two 620 b to a lead 606 eof the leadframe 602. Notice that the stacked interconnection plate one630 a has a first flat-top area 634 a and the stacked interconnectionplate two 630 b has a second flat-top area 634 b that is in level withthe first flat-top area 634 a.

The partial semiconductor package 700 of FIG. 3B packages semiconductordie one 720 a and semiconductor die two 720 b atop a leadframe 702. Anintimate interconnection plate one 726 a and a stacked interconnectionplate one 730 a are employed to interconnect bulk of the top contactarea of semiconductor die one 720 a with a terminal lead 706 b of theleadframe 702. An intimate interconnection plate two 726 b and a stackedinterconnection plate two 730 b are employed to interconnect bulk of thetop contact area of semiconductor die two 720 b with terminal leads 706f, 706 g and 706 h of the leadframe 702. Additionally, a bond wire one722 a is employed to interconnect a small portion of the top contactarea of semiconductor die one 720 a with a terminal lead 706 a of theleadframe 702 and a bond wire two 722 b is employed to interconnect asmall portion of the top contact area of semiconductor die two 720 bwith a terminal lead 706 e of the leadframe 702. Notice that the stackedinterconnection plate one 730 a has a first flat-top area 734 a and thestacked interconnection plate two 730 b has a second flat-top area 734 bthat is in level with the first flat-top area 734 a. Notice also thatthe stacked interconnection plate one 730 a has an underside partiallyetched peripheral overhang 732 a and the stacked interconnection platetwo 730 b has an underside partially etched peripheral overhang 732 b,which can accommodate features such as bonding wires one and two 722 a,722 b.

The partial semiconductor package 800 of FIG. 3C packages semiconductordie one 820 a and semiconductor die two 820 b atop a leadframe 802. Anintimate interconnection plate one 826 a and a stacked interconnectionplate one 830 a are employed to interconnect bulk of the top contactarea of semiconductor die one 820 a with a terminal lead 806 b of theleadframe 802. An intimate interconnection plate two 826 b and a stackedinterconnection plate two 830 b are employed to interconnect bulk of thetop contact area of semiconductor die two 820 b with terminal leads 806f, 806 g and 806 h of the leadframe 802. Additionally, a bond wire one822 a is employed to interconnect a small portion of the top contactarea of semiconductor die one 820 a with a terminal lead 806 a of theleadframe 802 and a bond wire two 822 b is employed to interconnect asmall portion of the top contact area of semiconductor die two 820 bwith a terminal lead 806 e of the leadframe 802. Notice first that thestacked interconnection plate one 830 a has a first flat-top area 834 aand the stacked interconnection plate two 830 b has a second flat-toparea 834 b that is in level with the first flat-top area 834 a.Secondly, the stacked interconnection plate one 830 a and the stackedinterconnection plate two 830 b have top dimples 831 a and 831 brespectively for locking to bottom dimples (not shown) on the intimateinterconnection plates one and two 826 a and 826 b, which serve toreduce related bonding stress and improving related bonding agent flow.As a side remark, other features of lower elevation such as anchorholes, out-of-plane conductive bridges between fingers and windowsdescribed in U.S. application Ser. No. 12/326,065 can be added to any orall of the stacked interconnection plates as well. Thirdly, the stackedinterconnection plate two 830 b has a locking tab 829 b that is locatedand sized such that, upon bonding of the stacked interconnection platetwo 830 b onto the intimate interconnection plate two 826 b, it isplaced in intermeshing relationship with corresponding terminal leads806 f and 806 g nearby to minimize rotational creepage of semiconductordie two 820 b and the intimate interconnection plate two 826 b during apackaging process for the partial semiconductor package 800. Stackedinterconnection plate one 830 a has a similar locking tab 829 a.Fourthly, the top area of stacked interconnection plate one 830 a andstacked interconnection plate two 830 b are purposely made to berespectively slightly smaller than that of intimate interconnectionplate one 826 a and intimate interconnection plate two 826 b so as tocreate a number of ledges 828 a and 828 b. Upon later sealing of thepartial semiconductor package 800 with a molding encapsulant, theseledges 828 a and 828 b will function to strengthen the locking of themolding encapsulant onto the partial semiconductor package 800.

The partial semiconductor package 900 of FIG. 3D packages semiconductordie one 920 a and semiconductor die two 920 b atop a leadframe 902. Anintimate interconnection plate one 926 a and a stacked interconnectionplate one 930 a are employed to interconnect bulk of the top contactarea of semiconductor die one 920 a with a terminal lead 906 b of theleadframe 902. An intimate interconnection plate two 926 b and a stackedinterconnection plate two 930 b are employed to interconnect bulk of thetop contact area of semiconductor die two 920 b with terminal leads 906f, 906 g and 906 h of the leadframe 902. Additionally, a bond wire one922 a is employed to interconnect a small portion of the top contactarea of semiconductor die one 920 a with a terminal lead 906 a of theleadframe 902 and a bond wire two 922 b is employed to interconnect asmall portion of the top contact area of semiconductor die two 920 bwith a terminal lead 906 e of the leadframe 902. Notice that the stackedinterconnection plate one 930 a has a first flat-top area 934 a and thestacked interconnection plate two 930 b has a second flat-top area 934 bthat is in level with the first flat-top area 934 a. Additionally, thestacked interconnection plate two 930 b has a locking tab 929 b that islocated and sized such that, upon bonding of the stacked interconnectionplate two 930 b onto the intimate interconnection plate two 926 b, it isplaced in intermeshing relationship with corresponding terminal leads906 f and 906 g nearby to minimize rotational creepage of semiconductordie two 920 b and the intimate interconnection plate two 926 b during apackaging process for the partial semiconductor package 900. Similarly,stacked interconnection plate one 930 a has a locking tab 929 a.

FIG. 4A and FIG. 4B illustrate the completion of a compact semiconductorpackage 1000 a of the present invention with a molding encapsulant 1030.In FIG. 4A a partial semiconductor package 1000 has been made by moldinga molding encapsulant 1030 onto any of the heretofore presented partialsemiconductor packages of the present invention (FIG. 2, FIG. 3A throughFIG. 3D) then removing a top portion of the molding encapsulant 1030till a first flat-top area 1034 a and a second flat-top area 1034 b oftheir corresponding stacked interconnection plates are exposed tomaintain effective top-side cooling. As a matter of course, variousterminal leads 1006 e, 1006 f, 1006 g, 1006 h of a base leadframe 1002are also exposed through the molding encapsulant 1030 for makingexternal electrical connection. A bypass capacitor 1050, having two endcapacitor terminals 1050 a and 1050 b located at its ends, is thenstacked and bonded atop the two flat-top areas 1034 a and 1034 b. Thebypass capacitor 1050 shown has end capacitor terminals 1050 a and 1050b which wrap around the ends of the capacitor, however the terminals mayalternatively only be located on the bottom side. As a preferredembodiment the bypass capacitor 1050 can be a surface mount device (SMD)style capacitor having a very compact outline. In this way, the bypasscapacitor 1050 is now closely integrated atop the semiconductor package1000 a with reduced interconnection parasitic impedance (inductance andequivalent series resistance (ESR)). As a more specific example ofapplication, the two semiconductor dies and the bypass capacitor 1050 ofthe semiconductor package 1000 a can respectively be a high-side (HS)MOSFET, a low-side (LS) MOSFET and a bypass capacitor of apower-conversion circuit output stage.

FIG. 5 illustrates an alternative compact semiconductor package 1000 bof the present invention with a molding encapsulant 1030. Here, apartial semiconductor package can be made by stacking and bonding theSMD style bypass capacitor 1050 atop the two flat-top areas 1034 a and1034 b (not visible in this view) of any of the heretofore presentedpartial semiconductor packages of the present invention (FIG. 2, FIG. 3Athrough FIG. 3D). The molding encapsulant 1030 is then molded onto thepackage in progress followed by removing a top portion of the moldingencapsulant 1030 till the top surface of the bypass capacitor 1050 isexposed. Comparing with the semiconductor package 1000 a of FIG. 4B,while the bypass capacitor 1050 is now more robustly embedded in thesemiconductor package 1000 b with better overall package seal, thesemiconductor package 1000 b does offer correspondingly less effectivetop-side cooling.

To those skilled in the art, by now it should become clear that, albeitbeing desirable, to practice the present invention compact semiconductorpackage with integrated bypass capacitor does not absolutely require thestacked interconnection plates in the package. Take for example thepartial semiconductor package 600 of FIG. 3A, in the absence of thestacked interconnection plates 630 a and 630 b one just needs to insurethat each of the intimate interconnection plates 626 a and 626 b has aflat-top area, respectively similar to the first flat-top area 634 a andthe second flat-top area 634 b, leveled with each other for integrallybonding the bypass capacitor. Also, within the context of the presentinvention, the circuit substrate, instead of being a leadframe, can be alaminated circuit having numerous terminal leads for making externalelectrical connection. However, to insure effective bottom-side heatdissipation, the laminated circuit should include a plurality of thermalvias. Furthermore, each of the semiconductor dies 620 a and 620 b can benormally oriented with its substrate down or oriented upside down in aflip-chip configuration. To maximize the numerous benefits of thepresent invention, the following lists some guidelines for the selectionof material properties:

-   -   The circuit substrate should be thermally and electrically        conductive, the intimate interconnection plates should be        thermally and electrically conductive, and the stacked        interconnection plates should be thermally conductive or        thermally and electrically conductive.

With reference made to FIG. 3A, FIG. 4A and FIG. 4B as an illustrativeexample, a method of packaging the present invention semiconductorpackage 1000 a includes:

a) Providing a leadframe 602 having numerous terminal leads 606 a, 606b, 606 f, 606 g, 606 h for external electrical connection. To implementa package pin out geometry that is compatible with an industry standard,for example, an industry standard DFN lead frame should be used here. Abonding agent is then dispensed atop leadframe die pads and the numerousterminal leads. The bonding agent can be made of a solder paste, athermal and/or electrically conductive epoxy, etc. and it can bethermally or UV (ultra violet) curable.

b) Attaching two semiconductor dies 620 a and 620 b atop the leadframedie pads of the leadframe 602. More specifically, both semiconductordies 620 a and 620 b can be attached to the leadframe 602 via solder asin a standard die attachment procedure. Solderable top metal should beused on the semiconductor dies 620 a and 620 b. For example, exposedAluminum in the top source and gate pad regions of a MOSFET die shouldbe electrolessly plated with NiAu.

c) Attaching intimate interconnection plates 626 a and 626 brespectively to the top contact areas of the semiconductor dies 620 aand 620 b and the leadframe 602 for electrical connection between thetop contact areas and the numerous terminal leads 606 a, 606 b, 606 f,606 g, 606 h. More specifically, the attachment can be done via solderdie attach. Similarly, an intimate interconnection plate three 626 c canbe simultaneously attached to another top contact area of semiconductordie one 620 a and the terminal lead 606 a. A bonding agent is thendispensed atop the intimate interconnection plates 626 a and 626 b.

d) Attaching stacked interconnection plates 630 a and 630 b respectivelyatop the intimate interconnection plates 626 a and 626 b. Morespecifically, the attachment can be done via solder attach.Alternatively, an electrically and thermally conductive epoxy can beused for the attachment. The package in progress is then treated toactivate the various bonding agents thus forming a permanent bondbetween the stacked interconnection plates 630 a, 630 b and the intimateinterconnection plates 626 a, 626 b. The package treatment can involveusing heat, UV, etc. to reflow a solder paste or to cure an epoxy.Importantly, the various related semiconductor die thicknesses, platethicknesses and bonding agent thicknesses should be chosen to insurethat the second flat-top area 634 b is in level with the first flat-toparea 634 a.

e) Molding a molding encapsulant 1030 over the package in progress.

f) Removing a top portion of the molding encapsulant 1030 till the twoflat-top areas of the stacked interconnection plates 630 a and 630 b areexposed. More specifically, mechanical grinding can be employed for theremoval.

g) Stacking then bonding the bypass capacitor 1050 atop the two stackedinterconnection plates 630 a and 630 b via the two flat-top areas.

As already mentioned above, for making the alternative compactsemiconductor package 1000 b of FIG. 5 the above steps e) through g)should be replaced by:

-   -   Stacking and bonding the SMD style bypass capacitor 1050 atop        the two flat-top areas 1034 a and 1034 b of the package in        progress, molding a molding encapsulant 1030 over the package in        progress then removing a top portion of the molding encapsulant        1030 till the top surface of the bypass capacitor 1050 is        exposed.

A compact semiconductor package with intimate interconnection plates,stacked interconnection plates and an integrated bypass capacitor isproposed for packaging semiconductor dies with reduced die-to-terminalelectrical resistance, die-to-ambient thermal resistance andinterconnection parasitic impedance of the bypass capacitor at the sametime. By now it should become clear to those skilled in the art that thenumerous embodiments just described can be readily modified to suitother specific applications as well. While the description abovecontains many specificities, these specificities should not beconstructed as accordingly limiting the scope of the present inventionbut as merely providing illustrations of numerous presently preferredembodiments of this invention. For example, the present inventionsemiconductor package system expects to be applicable to the packagingof a wide variety of semiconductor dies other than just MOSFET dies asdisclosed herein. These semiconductor dies include IGBT and dies made ofSiGe, SiC, GaAs and GaN. For another example, the present invention canbe extended to employ multiple layers of stacked interconnection platesas well.

Throughout the description and drawings, numerous exemplary embodimentswere given with reference to specific configurations. It will beappreciated by those of ordinary skill in the art that the presentinvention can be embodied in numerous other specific forms and those ofordinary skill in the art would be able to practice such otherembodiments without undue experimentation. The scope of the presentinvention, for the purpose of the present patent document, is hence notlimited merely to the specific exemplary embodiments of the foregoingdescription, but rather is indicated by the following claims. Any andall modifications that come within the meaning and range of equivalentswithin the claims are intended to be considered as being embraced withinthe spirit and scope of the present invention.

1. A compact semiconductor package with integrated bypass capacitor, thecompact semiconductor package comprising: a circuit substrate having aplurality of terminal leads for external electrical connection; a numberof semiconductor dies whose bottom surfaces are bonded atop the circuitsubstrate; a plurality of elevation-adaptive interconnection plates forbonding and interconnecting the top contact area of each of saidsemiconductor dies with said circuit substrate while being threedimensionally formed to accommodate for elevation difference therebetween whereby electrically connecting said top contact area with saidterminal leads; a first member of said elevation-adaptiveinterconnection plates further comprises a first flat-top area and asecond member of said elevation-adaptive interconnection plates furthercomprises a second flat-top area in level with the first flat-top area;a bypass capacitor, having two end capacitor terminals, stacked atop thetwo interconnection plate members while being bonded thereto via thefirst flat-top area and the second flat-top area; and a first moldingencapsulant extending from a bottom of the circuit substrate to asurface coplanar with the first flat-top area and the second flat-toparea plus a second molding encapsulant extending from the surfacecoplanar with the first flat-top area and the second flat-top area to asurface coplanar with a top surface of the bypass capacitor wherebycompactly integrating the bypass capacitor into the semiconductorpackage with reduced interconnection parasitic impedance.
 2. The compactsemiconductor package of claim 1 wherein the plurality ofelevation-adaptive interconnection plates further comprising: a firstnumber of low thermal and electrical resistance intimate interconnectionplates for bonding and interconnecting the top contact area of saidsemiconductor dies with said circuit substrate; and a second number oflow thermal resistance stacked interconnection plates, each stacked andbonded atop a selected number of the intimate interconnection plates,for adding effective top-side cooling to the compact semiconductorpackage.
 3. The compact semiconductor package of claim 2 wherein the topportion of at least one stacked interconnection plates further comprisesa peripheral overhang above its corresponding intimate interconnectionplates whereby the peripheral overhang allows for a maximized topsurface area of said at least one stacked interconnection plates forheat dissipation independent of otherwise areal constraints applicableto the intimate interconnection plates below.
 4. The compactsemiconductor package of claim 3 wherein the periphery of said at leastone stacked interconnection plates is further partially etched at itsunderside to create the peripheral overhang.
 5. The compactsemiconductor package of claim 3 wherein said at least one stackedinterconnection plates is further three dimensionally formed to createthe peripheral overhang.
 6. The compact semiconductor package of claim 3wherein each of said selected number of intimate interconnection platesis further shaped and sized, independently of the amount of top surfaceof its corresponding stacked interconnection plate, to maximize itscorresponding bonding areas on said semiconductor die thus reducingtheir associated spreading resistance.
 7. The compact semiconductorpackage of claim 1 wherein at least one elevation-adaptive intimateinterconnection plate further comprises a plurality of locking tabsplaced in intermeshing relationship with a corresponding number ofterminal leads nearby to minimize rotational creepage of saidsemiconductor dies during a packaging process for the semiconductorpackage.
 8. The compact semiconductor package of claim 1 wherein atleast one stacked interconnection plate further comprises a plurality oflocking tabs placed in intermeshing relationship with a correspondingnumber of terminal leads nearby to minimize rotational creepage of saidsemiconductor dies during a packaging process for the semiconductorpackage.
 9. The compact semiconductor package of claim 1 wherein atleast one stacked interconnection plate further comprises a plurality ofout-of-plane conductive bridges for resiliently bonding said selectednumber of the intimate interconnection plates.
 10. The compactsemiconductor package of claim 1 wherein the circuit substrate is aleadframe further comprising a conductive die pad for bonding the numberof semiconductor dies.
 11. The compact semiconductor package of claim 1wherein the circuit substrate is a laminated circuit further comprisinga plurality of thermal vias to increase bottom-side cooling.
 12. Thecompact semiconductor package of claim 1 wherein the number ofsemiconductor dies further comprise a high-side (HS) MOSFET and alow-side (LS) MOSFET which, together with the bypass capacitor, are allcomponents of a power-conversion circuit.
 13. The compact semiconductorpackage of claim 2 wherein the number of semiconductor dies furthercomprise a high-side (HS) MOSFET and a low-side (LS) MOSFET which,together with the bypass capacitor, are all components of apower-conversion circuit.
 14. The compact semiconductor package of claim13 wherein the HS MOSFET is a bottom source HS (BSHS) MOSFET.
 15. Thecompact semiconductor package of claim 13 further comprising a moldingencapsulant for encapsulating most of the semiconductor package whereinthe first flat-top area and the second flat-top area is exposed throughthe molding encapsulant.
 16. A compact semiconductor package withintegrated bypass capacitor, the compact semiconductor packagecomprising: a circuit substrate having a first plurality of terminalleads for external electrical connection; a number of semiconductor dieswhose bottom surfaces are bonded atop the circuit substrate; a firstnumber of elevation-adaptive interconnection plates for bonding andinterconnecting the top contact area of said semiconductor dies withsaid circuit substrate while being three dimensionally formed toaccommodate for elevation difference there between whereby electricallyconnecting said top contact area with said first plurality of terminalleads; a second number of elevation-adaptive interconnection plates forbonding the top contact area of said semiconductor dies and forming asecond plurality of terminal leads for external electrical connectionwhile being three dimensionally formed to accommodate for elevationdifference there between; a first member of said first number ofelevation-adaptive interconnection plates further comprises a firstflat-top area and a second member of said first number ofelevation-adaptive interconnection plates further comprises a secondflat-top area in level with the first flat-top area; a bypass capacitor,having two end capacitor terminals, stacked atop the two interconnectionplate members while being bonded thereto via the first flat-top area andthe second flat-top area; and a first molding encapsulant extending froma bottom of the circuit substrate to a surface coplanar with the firstflat-top area and the second flat-top area plus a second moldingencapsulant extending from the surface coplanar with the first flat-toparea and the second flat-top area to a surface coplanar with a topsurface of the bypass capacitor whereby compactly integrating the bypasscapacitor into the semiconductor package with reduced interconnectionparasitic impedance.